Abstract: This paper proposes a short-pulse laser driver using direct-drive depletion-mode gallium nitride high-electron-mobility-transistor (DDD GaN HEMT) device. Known for its low on-resistance, ...
Abstract: We employed 808 nm and 885 nm pumping sources for time-shared pumping of the compact Nd:YAG/Cr4+:YAG passively Q-switched laser by incorporating time and sequence modulation functions into ...
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