Researchers demonstrate a new strategy for magnetization reversal in multiferroic materials, opening pathways to more energy-efficient electronics. (Nanowerk News) As the digital world demands greater ...

BFCO 60-nm nanodots, with single domain structures, hold promise for high-density and low-power nonvolatile magnetic memory devices. Traditional memory devices are volatile and the current ...

A research team led by Assistant Professor Kei Shigematsu and Specially Appointed Associate Professor Hena Das, along with graduate student Takuma Itoh and Professor Masaki Azuma from the Institute of ...

Researchers at the Tokyo Institute of Technology used pulsed laser deposition to install multiferroic BFCO onto a conductive Nb: SrTiO 3 (001) substrate, according to a study published in the journal ...

Multiferroic (MF) materials are materials that have both magnetic and ferroelectric properties. They are particularly interesting to materials scientists as they allow the manipulation of magnetic ...

Physicists observed an exotic 'multiferroic' state in a perfectly two-dimensional material for the first time. The findings could lead to faster, more efficient magnetic data storage devices. MIT ...

(Nanowerk News) Traditional memory devices are volatile and the current non-volatile ones rely on either ferromagnetic or ferroelectric materials for data storage. In ferromagnetic devices, data is ...

The discovery of electric-field-induced magnetization reversal perpendicular to the electric field in multiferroic materials could revolutionize memory design, enabling more space- and ...